What is an Insulated Gate Bipolar Transistor? The Insulated Gate Bipolar Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor switching device. The IGBT Transistor takes the best parts of these two types of common transistors, the high input impedance and high switching speeds of a MOSFET with the low saturation voltage of a bipolar transistor, and ... IGBT Definition: An Insulated Gate Bipolar Transistor (IGBT) is defined as a semiconductor device that combines the advantages of Power MOSFETs and Power BJTs. Structure: The IGBT structure includes an additional p+ injection layer, which enhances its performance compared to PMOSFETs. IGBT standards for Insulated Gate Bipolar Transistor. It is another development in the power electronics field also called COMFET (conductivity modulated field-effect transistor), IGT (insulated gate transistor), GEMFET, or bipolar MOSFET. IGBT combines the properties of BJT (bipolar junction transistor) IGBT is a three-terminal semiconductor switching device that combines the input characteristics of a BJT and the output characteristics of a MOSFET. Learn how IGBT works, its internal structure, its types (symmetrical and asymmetrical), and its applications in power electronics.
